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| 2-A DC Motor Driver TLE 4202 B Bipolar IC Overview Features * * * * * * * Drives motors up to 2 A Integrated free-wheeling diodes 2.5 A Short-circuit proof to ground Overtemperature protection Low saturation voltages through bootstrap Wide temperature range Suitable for applications in automotive engineering P-TO220-7-1 Type TLE 4202 B Description Ordering Code Q67000-A8225 Package P-TO220-7-1 The two power comparators can switch magnets, motors or other loads either by being separated from each other or by being combined to a full-bridge circuit. The IC is designed for application in motor vehicles. It can be applied at package temperatures between - 40 C and 130 C. The IC contains two amplifiers featuring a typical open-loop voltage gain of 80 dB at 500 Hz. The input stages are PNP differential amplifiers thus resulting in a common-mode input voltage range from 0 V to approx. the value of VS and in a maximum input differential voltage of VS. To obtain low saturation voltages at the sink circuit, the drive circuit of the sink transistor is connected to the supply voltage. An SOA protective circuit protects the IC against ground short-circuits. At chip temperatures above approx. 160 C the source transistors are turned off. Semiconductor Group 1 1998-02-01 TLE 4202 B 1234567 1 3 GND V S Q1 Q2 2 AEP00612 Figure 1 Pin Configuration (top view) Semiconductor Group 2 1998-02-01 TLE 4202 B Pin Definitions and Functions Pin No. 1 Symbol I1 Function Input 1 Non-inverting input 1, to be connected to pin 2 and pin 3 according to general rules Inverting input 3 Inverting inputs of the two comparators; internally connected to reference voltage across 50 k (typ. 1.7 V) Output Q1 Push-pull output B DC-short-circuit proof to ground. Integrated free-wheel diodes to ground and to supply voltage Ground Output Q2, see pin 3 Supply voltage Has to be blocked to ground with a ceramic capacitor of at least 100 nF directly at the pins of the ICs Input 2 Non-inverting input 2; see pin 1 2 I3 3 Q1 4 5 6 GND Q2 VS 7 I2 Semiconductor Group 3 1998-02-01 TLE 4202 B Supply Voltage VS 6 VS 80 dB Input 1 1 0 dB + - Amp 1 3 Output Q1 Inverting 2 Input 3 50 k +1.7 V TLE 4202B Power Limiter and Temperature Protection VS Input 2 7 + - Amp 2 0 dB 80 dB 5 Output Q2 4 GND AEB00613 Figure 2 Block Diagram Semiconductor Group 4 1998-02-01 TLE 4202 B Absolute Maximum Ratings TC = - 40 to 130 C Parameter Supply voltage Output current of sink transistors TC 85 C Output current of source transistors internally limited Diode peak currents to + VS to ground Voltage at pins I1, I2, I3 Voltage at pins Q1, Q2 1) Junction temperature Storage temperature Operating Range Supply voltage Case temperature during operation RL 6 , VS = 7 ... 16 V RL 9 , VS = 16 V Voltage amplification (at negative feedback with external connection) Thermal resistance system - case 1) Symbol Limit Values min. max. 40 2.5 - - Unit V A VS IQ IQ IF + IF - V1, 2, 7 V3, 5 Tj Tstg - - - - - - 0.3 - - - 55 2.5 2.5 A A V V C C VS - 150 125 VS TC 3.5 - 40 - 17 - 130 V C C VV Rth SC 30 - - 4 dB K/W The output voltages are kept within a permissible range by free-wheel diodes Outputs Q1 and Q2 short-circuit proof to ground RL: Resistance between output 1 and output 2 Semiconductor Group 5 1998-02-01 TLE 4202 B Characteristics VS = 13 V; Tj = 25 C Parameter Symbol Limit Values min. General Data Quiescent current IS GVO Open-loop gain - 50 15 80 25 - mA dB S=1 f = 500 Hz VS 7 V 16 V TC = - 40 C to 110 C 1 1 typ. max. Unit Test Condition Test Circuit Input Characteristics Input current (pins I1, I2) Input current Input resistance Input reference voltage Input offset voltage II 1, 7 II 2 - II 2 RI 1, 7 VI 2 VI 0 - - - 1 1.4 - 20 1 35 230 5 1.7 - 3 70 300 - 2 20 A A A M V mV VI 1, 12 = 0 VI 2 = 0; VI 1, 7 = VS VI 2 VS; VI 1, 7 = 0 V f = 1 kHz I2 = 0; VI 1, 7 = 0 V - 2 1 - 1 1 3 Semiconductor Group 6 1998-02-01 TLE 4202 B Characteristics (cont'd) VS = 13 V; Tj = 25 C Parameter Symbol Limit Values min. Output Characteristics Saturation voltages Source operation VSato VSato measured to VS Sink operation typ. max. Unit Test Condition Test Circuit VSato VSatu VSatu ISC VF + VF - SR SR - - - - - - Short-circuit current Diode forward voltage to + VS to ground Slew rate falling edge Slew rate rising edge Switching Times Rise time of VQ Fall time of VQ Switch-ON delay Switch-OFF delay 0.9 1.2 1.5 0.25 0.5 1 1.25 1 1.6 2.1 0.4 0.75 1.3 1.6 V V V V V V A IQ = - 0.3 A;S1 = 1 IQ = - 1.0 A;S1 = 1 IQ = - 2 A; S1 = 1 IQ = 0.3 A; S1 = 2 IQ = 1 A; S1 = 2 IQ = 2 A; S1 = 2 VQ = 0 V 2 2 2 2 2 2 2 - - - - 1 0.9 6 6 1.3 1.2 - - IF = IQ = 1 A V IF = IQ = 1 A V V/s - V/s - 2 2 1 1 tr tf tON tOFF Quiescent current IS - - - - - 1.5 1.5 3 1.5 15 - - - - 30 s s s s mA - - - - S=1 1 1 1 1 1 Semiconductor Group 7 1998-02-01 TLE 4202 B Characteristics VS 7 V to 17 V; TC = - 40 to 110 C Parameter Symbol Limit Values min. Saturation Voltage Source operation VSato VSato measured to VS Sink operation - - - - - - - 0.9 1.2 1.5 0.25 0.5 1.2 - 1.2 1.8 2.4 0.60 1.1 2 3.5 V V V V V V V typ. max. Unit Test Condition Test Circuit Short-circuit current VSato VSatu VSatu VSatu - ISC 110 C IQ = - 0.3 A;S = 1 IQ = - 1 A; S = 1 IQ = - 2 A; S = 1 IQ = 0.3 A; S1 = 2 IQ = 1 A; S1 = 2 IQ = 2 A; S1 = 2 VQ = 0 V TC = 25 C to 2 2 2 2 2 2 - Semiconductor Group 8 1998-02-01 TLE 4202 B TDB 7805 6 510 1 0 0 V + VS 100 F 100 nF 1 S 2 + - Amp 1 3 V Q1 1000 F 1 V12 12 220 nF 8 TLE 4202B 5 V Q2 1000 F 510 4 AES00614 Figure 3 Test Circuit 1 Semiconductor Group + 7 - Amp 2 220 nF 8 9 1998-02-01 TLE 4202 B + VS 6 1 k 1 2 1 2 S1 100 F 100 nF + - Amp 1 3 VQ3 S2 S1 2 1 TLE 4202 - Q = - SC 5 47 / 10 W A 1k 4 AES00615 VSato = VS - VQ3/5 VSatu = VQ3/5 SC = - Q Figure 4 Test Circuit 2 Semiconductor Group + 7 Amp 2 VQ5 10 1998-02-01 TLE 4202 B +11.3 V 100 nF 100 F 50 50 4.95 k 6 V 0 1 + - Amp 1 3 100 x V 0 2 TLE 4202B - V 0 4.95 k 4 100 F 50 50 100 n F Figure 5 Test Circuit 3 Semiconductor Group + 7 Amp 2 5 100 x V 0 AES00616 -1.7 V 11 1998-02-01 TLE 4202 B 13 V 6 100 F 100 nF V 1 1 + - Amp 1 3 VQ1 220 nF 1 220 nF 2 TLE 4202B - M 220 nF 1 Figure 6 Application Circuit V V 5 0 V VQ/V 0.9 0.5 0.1 0 t ON Figure 7 Diagrams 12 1998-02-01 Semiconductor Group + V 2 7 Amp 2 5 VQ2 4 AES00617 t tR t OFF tF t AET00611 TLE 4202 B Saturation Voltage versus Output Current AED01340 Saturation Voltage versus Temperature AED01341 1.6 1.6 V V SAT 1.4 1.2 V SAT V 1.4 1.2 1.0 0.8 0.6 0.4 V S = 13 V L = 1 A V Sato V Sato 1.0 0.8 0.6 V Satu V S = 13 V T C = 25 C V Satu 0.4 0.2 0.0 -40 0.2 0.0 0.0 0.5 1.0 1.5 2.0 A 2.5 0 40 80 L 120 C 160 Tj Semiconductor Group 13 1998-02-01 TLE 4202 B Package Outlines P-TO220-7-1 (Plastic Transistor Single Outline) 10 +0.4 10.2 -0.2 3.75 +0.1 4.6 -0.2 1 x 45 1.27 +0.1 2.8 19.5 max 16 0.4 8.8 -0.2 2.6 0.4 +0.1 8.4 0.4 8.6 0.3 15.4 0.3 GPT05108 1 1.27 7 0.6 +0.1 1) 0.6 M 7x 4.5 0.4 1) 0.75 -0.15 at dam bar (max 1.8 from body) 1) 0.75 -0.15 im Dichtstegbereich (max 1.8 vom Korper) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". Semiconductor Group 14 10.2 0.3 Dimensions in mm 1998-02-01 |
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